We have studied current-driven domain wall motion in modifiedGa_0.95Mn_0.05As Hall bar structures with perpendicular anisotropy by usingspatially resolved Polar Magneto-Optical Kerr Effect Microscopy andmicromagnetic simulation. Regardless of the initial magnetic configuration, thedomain wall propagates in the opposite direction to the current with criticalcurrent of 1~2x10^5A/cm^2. Considering the spin transfer torque term as well asvarious effective magnetic field terms, the micromagnetic simulation resultsare consistent with the experimental results. Our simulated and experimentalresults suggest that the spin-torque rather than Oersted field is the reasonfor current driven domain wall motion in this material.
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机译:我们通过空间分辨的极性磁光克尔效应显微镜和微磁模拟研究了在具有垂直各向异性的改进Ga_0.95Mn_0.05As霍尔棒结构中电流驱动的畴壁运动。不管初始的磁结构如何,畴壁都以与电流相反的方向传播,临界电流为1〜2x10 ^ 5A / cm ^ 2。考虑到自旋传递转矩项以及各种有效磁场项,微磁仿真结果与实验结果一致。我们的模拟和实验结果表明,自旋转矩而不是Oersted磁场是这种材料中电流驱动畴壁运动的原因。
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